文章摘要
曹玥,王灿,张改梅,宋晓利,陈强.PECVD法制备纳米多孔SiOx薄膜[J].包装工程,2017,38(19):35-40.
CAO Yue,WANG Can,ZHANG Gai-mei,SONG Xiao-li,CHEN Qiang.Preparation of Nano-porous SiOx Films by PECVD Method[J].Packaging Engineering,2017,38(19):35-40.
PECVD法制备纳米多孔SiOx薄膜
Preparation of Nano-porous SiOx Films by PECVD Method
投稿时间:2017-08-16  修订日期:2017-10-10
DOI:
中文关键词: 多孔SiOx薄膜  折射率  单体  沉积率
英文关键词: porous SiOx films  refractive index  monomer  deposition rate
基金项目:国家自然科学基金(51305038);北京印刷学院科技面上项目(Eb201701)
作者单位
曹玥 北京印刷学院北京 102600 
王灿 北京印刷学院北京 102600 
张改梅 北京印刷学院北京 102600 
宋晓利 北京印刷学院北京 102600 
陈强 北京印刷学院北京 102600 
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中文摘要:
      目的 研究基于等离子体增强气相化学沉积(PECVD)制备多孔SiOx薄膜的方法。方法 以六甲基二硅氧烷(HMDSO)为单体,并通入氧气、氩气,再加入少量的有机物质,通过辉光放电的方式形成等离子体,从而在玻璃基材表面沉积,制备出氧化硅薄膜,再在高温下进行热处理,使氧化硅薄膜中的碳氢键等有机组分被除去,形成孔隙。研究单体与氧气的比例、沉积时间、沉积功率等实验条件对沉积率、形貌、结构以及折射率的影响。结果 当放电时间为10 min,放电功率为50 W,氧气与单体的体积比为1︰6时,薄膜沉积速率达到最优值,为14.6 nm/min。伸缩振动的吸收强度随着氧气含量的增加强度降低。经过热处理后,氧化硅表面的平整度得到提升,热处理后断面的形貌发生了变化,出现了断面层开裂的现象。结论 通过PECVD沉积SiOx薄膜,通过加热形成孔隙制备多孔SiOx薄膜,能将介电常数降低到1.9以下。
英文摘要:
      The work aims to study the method of preparing porous SiOx films based on plasma enhanced chemical vapor deposition (PECVD). With hexamethyldisiloxane (HMDSO) as monomer, the plasma was formed in the form of glow discharge with the addition of oxygen and argon and then small quantities of organic matters, so that they were deposited on the surface of the glass substrate and hence the silicon oxide films were prepared. By heat treatment at high temperatures, the carbon-hydrogen bonds and other organic components in the silicon oxide films were removed to form pores. The effects of experimental conditions, such as the ratio of monomer to oxygen, deposition time and deposition power on the deposition rate, morphology, structure and refractive index were investigated. When the discharge time was 10 min, the discharge power is 50 W, and the ratio of oxygen to monomer was 1︰6, the optimum deposition rate of the film was 14.6 nm/min. The absorption intensity of the stretching vibration decreased with the increase in the oxygen content. After heat treatment, the smoothness of the surface of the silicon oxide film had been improved, the morphology of the cross section had been changed after heat treatment, and the cracking of the cross section had appeared. SiOx films are deposited by PECVD and the porous SiOx films are prepared due to the porosity formed by heating, so that the dielectric constant can be reduced to below 1.9.
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